this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. december 2014 docid024615 rev 2 1/12 12 STT4P3LLH6 p-channel 30 v, 0.048 ? typ., 4 a stripfet? h6 deepgate? power mosfet in an sot23-6l package datasheet - preliminary data figure 1. internal schematic diagram features ? very low on-resistance r ds(on) ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p-channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. note: for the p-channel mosfet the actual polarity of the voltages and the current must be reversed. 1 2 3 6 5 4 sot23-6l ' * 6 6 & |