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  this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. december 2014 docid024615 rev 2 1/12 12 STT4P3LLH6 p-channel 30 v, 0.048 ? typ., 4 a stripfet? h6 deepgate? power mosfet in an sot23-6l package datasheet - preliminary data figure 1. internal schematic diagram features ? very low on-resistance r ds(on) ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p-channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. note: for the p-channel mosfet the actual polarity of the voltages and the current must be reversed. 1 2 3 6 5 4 sot23-6l '  *  6  6&s order code v ds r ds(on) max i d STT4P3LLH6 30 v 0.056 at 10 v 4 a table 1. device summary order code marking package packaging STT4P3LLH6 4k3l sot23-6l tape and reel www.st.com
contents STT4P3LLH6 2/12 docid024615 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024615 rev 2 3/12 STT4P3LLH6 electrical ratings 1 electrical ratings note: for the p-channel mosfet the actual polarity of the voltages and the current must be reversed. table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current (continuous) at t amb = 25 c 4 a i d drain current (continuous) at t amb = 100 c 2.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 16 a p tot total dissipation at t amb = 25 c 1.6 w t j max. operating junction temperature 150 c t stg storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-amb (1) 1. when mounted on fr-4 board of 1 inch2, 2oz cu, t < 10 sec thermal resistance junction-amb max 78 c/w
electrical characteristics STT4P3LLH6 4/12 docid024615 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. static symbol parameter test conditions min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a, 30 v i dss zero gate voltage drain current v gs = 0 v, v ds = 30 v 1 a v gs = 0 v, v ds =30v, tc = 125 c 10 i gss gate body leakage current v ds = 0 v, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2 a 0.048 0.056 v gs = 4.5 v, i d = 2 a 0.075 0.09 table 5. dynamic symbol parameter test conditions min typ max unit c iss input capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 639 - pf c oss output capacitance - 79 - c rss reverse transfer capacitance -52- q g total gate charge v dd = 15 v, i d = 4 a v gs = 4.5 v -6- nc q gs gate-source charge - 1.9 - q gd gate-drain charge - 2.1 - table 6. switching times symbol parameter test conditions min typ max unit t d(on) voltage delay time v dd = 15 v, i d = 2 a, r g = 4.7 , v gs = 10 v -5.4- ns t r (v) voltage rise time - 5 - t d (off) current fall time - 19.2 - t f crossing time - 3.4 -
docid024615 rev 2 5/12 STT4P3LLH6 electrical characteristics note: for the p-channel mosfet the actual polarity of the voltages and the current must be reversed. table 7. source drain diode symbol parameter test conditions min typ max unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =4 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s, v dd = 16 v, t j = 150 c -11.2 ns q rr reverse recovery charge - 3.5 nc i rrm reverse recovery current - 0.6 a
electrical characteristics STT4P3LLH6 6/12 docid024615 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance *,3*$/6 , ' $      9 '6 9   2shudwlrqlqwklvduhd lvolplwhge\pd[5 '6 rq 7 m ?& 7 dpe ?& 6lqjohsxovh pv pv ?v *,3*$/6 w s = wk  n5 wkmdpe / w s                 .     w s v  /  /  /  /  /  /  6,1*/(38/6( *,3*)65    , ' $     9 '6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 , '    9 *6 9 $     9 '6 9 *,3*)65      4 j q&  9 *6 9      9 ''  9 , '  $ *,3*)65    , ' $  5 '6 rq p     9 *6 9   *,3*)65
docid024615 rev 2 7/12 STT4P3LLH6 electrical characteristics figure 8. normalized v (br)dss vs temperature figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics *,3*07  7 - ?& 9 %5 '66 qrup       , ' ?$         &   9 '6 9  s)    & lvv & rvv & uvv *,3')65 *,3*07      7 - ?& 9 *6 wk qrup    , ' ?$       *,3*07 5 '6 rq   7 - ?& qrup        9 *6 9     9 6'    , 6' $  9      7 m ?& 7 m ?& 7 m ?&  *,3')65
test circuits STT4P3LLH6 8/12 docid024615 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times $0y 9 ' 9 '' 5 / '87 5 * 3 : 9 *6  ?)  ?) $0y '87 6 ' / * , ** 9 '' $0y / ?) '87 ' 6 * ' 6 * % % $ $$ % $ $ 5 * 9 '' 5 *6  ?)  ?) )$67 ',2'( 026 ',2'(
docid024615 rev 2 9/12 STT4P3LLH6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 16. sot23-6l package drawing 7049714_k
package mechanical data STT4P3LLH6 10/12 docid024615 rev 2 figure 17. sot23-6l recommended footprint (dimensions in mm) table 8. sot23-6l package mechanical data dim. mm min. typ. max. a 1.25 a1 0.00 0.15 a2 1.00 1.10 1.20 b0.36 0.50 c0.14 0.20 d 2.826 2.926 3.026 e 1.526 1.626 1.726 e 0.90 0.95 1.00 h 2.60 2.80 3.00 l 0.35 0.45 0.60 0 8 b.birrwsulqw      
docid024615 rev 2 11/12 STT4P3LLH6 revision history 5 revision history table 9. document revision history date revision changes 09-may-2013 1 first release. 09-dec-2014 2 text edits throughout document on cover page: ? changed title description ? updated features ? updated description updated table 4 in table 5 , changed values and test conditions in table 6 , changed values and test conditions in table 7 , changed values and test conditions added section 2.1: electrical characteristics (curves) updated section 3: test circuits updated section 4: package mechanical data
STT4P3LLH6 12/12 docid024615 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved


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